Zn-dopant dependent defect evolution in GaN nanowires

摘要: Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3–5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of on the defect evolution, including stacking fault, dislocation, twin boundary phase boundary, has systematically investigated by transmission electron microscopy first-principles calculations. Undoped show hexagonal wurtzite (WZ) structure good crystallinity. Several kinds boundaries, (103), (101) (201), as well Type I faults (…ABABBCB…), are observed in nanowires. increasing level (<1 induces formation screw dislocations featuring predominant component along radial direction At high (3–5 at%), meta-stable cubic zinc blende (ZB) domains generated WZ WZ/ZB (…ABABABA…) can be identified II faults. density (both II) increases levels, which turn leads to rough-surface morphology First-principles calculations reveal that will reduce energy both faults, favoring their nucleation An understanding evolution provides an important method control microstructure electrical properties p-type