摘要: Abstract A review of irradiation produced defects in Si is presented with emphasis on correlations macroscopic properties microscopic defects. Such correlation have been successfully used to interpret the electrical irradiated n-type Si. Additional studies are needed obtain a more complete interpretation p-type As further step this direction, new data annealing recovery hole concentration electron-irradiated Al-doped and B-doped The concept vacancy-rich defect clusters, together concepts point defects, explain many aspects neutron radiation damage. same concepts, electron damage also useful for interpreting by ion implantation.
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