Photoluminescence intensity of single-wall carbon nanotubes
作者： Y. Oyama , R. Saito , K. Sato , J. Jiang , Ge. G. Samsonidze
DOI: 10.1016/J.CARBON.2005.10.024
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摘要: Abstract The photoluminescence (PL) intensity of a single-wall carbon nanotube (SWNT) is calculated for each ( n , m ) by multiplying the photon-absorption, relaxation and photon-emission matrix elements. depends on chirality “type I vs type II” smaller diameter semiconducting SWNTs (less than 1 nm). By comparing results with experimental PL prepared chemical vapor deposition at different temperatures, we find that abundance nanotubes diameters should exhibit strong dependence, which may be related to stability their caps.
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