作者: R. Dolata , H. Scherer , A. B. Zorin , J. Niemeyer
DOI: 10.1116/1.1560213
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摘要: Deep submicron Nb/AlOx/Nb tunnel junctions and single electron transistors were fabricated by beam gun shadow evaporation, using stencil masks consisting of the thermostable polymer polyethersulfone germanium. The I(U) characteristics show special features due to tunneling Cooper pairs quasiparticles. Significant e-periodic gate modulation is observed in both superconducting normal state a gap energy Δeff up ≈1 meV has been achieved. refractory metal Nb combination with evaporation technique are discussed.