A General Approach for Sharp Crystal Phase Switching in InAs, GaAs, InP, and GaP Nanowires Using Only Group V Flow

摘要: III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB) crystal structure, pure phase wires represent the exception rather than rule. In this work, effective group V hydride flow was only growth parameter which changed during MOVPE to promote transitions from WZ ZB WZ. Our technique works in same way for all investigated III-Vs (GaP, GaAs, InP, InAs), with low high conditions. This strongly suggests a common underlying mechanism. It displays our best knowledge simplest changes condition control nanowire structure. The inherent reduction variables is crucial requirement interpretation frame existing understanding polytypism III–V nanowires. We show that change surface energetics vapor–liquid–solid system at vapor–liquid liquid–solid interface likely ...