Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots
作者： Yen-Lin Lai , Chuan-Pu Liu , Zheng-Quan Chen
DOI: 10.1063/1.1891291
关键词:
摘要: High quality green (508nm) and blue (424nm) light emitting diodes (LEDs) from InGaN∕GaN multiple quantum wells with stable ultrasmall indium-rich clusters of 2nm 3nm two different nominal indium contents have been grown by metalorganic chemical vapor deposition. Comprehensive calculations including polarization, piezoelectric field, size effect help derive an composition 59% 31% for the In-rich 3nm, which agrees amazingly well asymmetric phase diagram separation. From this model, we can further demonstrate that dominant mechanism LED is polarization however, LED, both are equally important.
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