Experimental proof-of-principle investigation of enhanced Z3DT in (001) oriented Si/Ge superlattices
作者： T. Koga , S. B. Cronin , M. S. Dresselhaus , J. L. Liu , K. L. Wang
DOI: 10.1063/1.1308271
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摘要: An experimental proof-of-principle of an enhanced Z3DT (thermoelectric figure merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value the at 300 K for a Si(20 A)/Ge(20 A) superlattice 0.1 κ=5 Wm−1 K−1, in-plane thermal conductivity, which factor seven enhancement relative to estimated Z3DT=0.014 bulk Si. good agreement between experiment and theory validates our modeling approach (denoted as “carrier pocket engineering”) design superlattices with values Z3DT. Proposals are made enhance even further.
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