Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array
作者： Robert J. Burke , Anand Srinivasan , Sanh D. Tang
DOI:
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摘要: A vertical transistor having a wrap-around-gate and method of fabricating such transistor. The (WAG) transistors are fabricated by process in which source, drain channel regions the automatically defined aligned fabrication process, without photolithographic patterning.
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