Forming a vertical transistor
作者： Eric Blomiley , Cem Basceri , Gurtej Sandhu , Nirmal Ramaswamy
DOI:
关键词: Transistor 、 Electronic engineering 、 Layer (electronics) 、 Monocrystalline silicon 、 Materials science 、 Optoelectronics 、 Substrate (printing) 、 Epitaxy
摘要: The invention includes methods of forming epitaxial silicon-comprising material and vertical transistors. In one implementation, a method providing substrate comprising monocrystalline material. A first portion the is outwardly exposed while second masked. layer epitaxially grown from not masked portion. After growing layer, unmasked. then unmasked Other aspects implementations are contemplated.
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