Nanotube enabled, gate-voltage controlled light emitting diodes

摘要: Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The incorporates gate electrode for providing field, first comprising dilute nanotube network injecting charge, second complementary and an electroluminescent semiconductor layer disposed intermediate electron layer. charge injection modulated by field. holes electrons, combine form photons, thereby causing emit visible light. In other embodiments employs conductive material with low density states such transistors contact barrier modulation comprises height lowering Schottky between adjacent Fermi level shift.