Comparison of thin film and bulk forms of the transparent conducting oxide solution Cd1+xIn2−2xSnxO4

摘要: Physical and structural properties of thin films prepared via rf magnetron sputtering the transparent conducting oxide spinel Cd1+xIn2−2xSnxO4 are compared to those reported for bulk specimens (prepared high-temperature solid state reaction at 1175 °C). Optical band gaps measured on were 3.5, 3.70, 3.65 eV x=0.15, 0.45, 0.70, which where 0.57, 0.94, 0.95 higher than their counterparts. Thin film Seebeck coefficients −18.0, −15.5, −15.5 μV/K respectively, 27, 24, 19 smaller in magnitude Sn-Mossbauer spectroscopy revealed isomer shifts that averaged 0.2 mm/s both specimens. The presence quadrupole splitting, near 0.48 0.39 specimens, suggests Sn+4 all is octahedral coordination. difference splitting have a different cation distribution effective mass base conduction band, method-of-four-coefficients, was found be 0.25, 0.18, 0.21, 0.22 me x equal 0.15, 1.0, respectively. A model explains changes optical gap thermopower as result differences fundamental (resulting from changing distribution), curvature, carrier density presented.