Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
作者： Yasuhiro Isobe , Hiromichi Ikki , Tatsuyuki Sakakibara , Motoaki Iwaya , Tetsuya Takeuchi
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摘要: We fabricated and characterized nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an freestanding GaN substrate. By optimizing the growth conditions, unintentionally doped oxygen concentration was much reduced in buffer layer. As a result, low leakage current layer realized without doping of deep acceptors, such as Fe C, by which impurity-contamination-free channel can be successfully grown. A maximum drain 220 mA/mm at gate source voltage +3.0 V, resistance 10.4 mΩcm2, threshold -1.6 V were realized.
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S. Heikman, S. Keller, T. Mates, S.P. DenBaars, U.K. Mishra, Growth and characteristics of Fe-doped GaN Journal of Crystal Growth. ,vol. 248, pp. 513- 517 ,(2003) , 10.1016/S0022-0248(02)01926-7
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire Journal of Applied Physics. ,vol. 102, pp. 093703- ,(2007) , 10.1063/1.2801015
Benjamin A. Haskell, Arpan Chakraborty, Feng Wu, Hideo Sasano, Paul T. Fini, Steven P. Denbaars, James S. Speck, Shuji Nakamura, Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy Journal of Electronic Materials. ,vol. 34, pp. 357- 360 ,(2005) , 10.1007/S11664-005-0110-9
T. Aggerstam, M. Sjödin, S. Lourdudoss, AlGaN/GaN high-electron-mobility transistors on sapphire with Fe-doped GaN buffer layer by MOVPE Physica Status Solidi (c). ,vol. 3, pp. 2373- 2376 ,(2006) , 10.1002/PSSC.200565152
Tetsuya Fujiwara, Stacia Keller, James S. Speck, Steven P. DenBaars, Umesh K. Mishra, Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations Applied Physics Express. ,vol. 3, pp. 101002- ,(2010) , 10.1143/APEX.3.101002
Yoshinori Oshimura, Kenichiro Takeda, Takayuki Sugiyama, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Akira Bandoh, Takashi Udagawa, AlGaN/GaN HFETs on Fe‐doped GaN substrates Physica Status Solidi (c). ,vol. 7, pp. 1974- 1976 ,(2010) , 10.1002/PSSC.200983587
Tomoya Iwahashi, Yasuo Kitaoka, Fumio Kawamura, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki, Rob Armitage, Hideki Hirayama, Liquid Phase Epitaxy Growth ofm-Plane GaN Substrate Using the Na Flux Method Japanese Journal of Applied Physics. ,vol. 46, pp. L227- L229 ,(2007) , 10.1143/JJAP.46.L227
Tetsuya Fujiwara, Siddharth Rajan, Stacia Keller, Masataka Higashiwaki, James S. Speck, Steven P. DenBaars, Umesh K. Mishra, Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors Applied Physics Express. ,vol. 2, pp. 011001- ,(2009) , 10.1143/APEX.2.011001
Z. H. Wu, A. M. Fischer, F. A. Ponce, B. Bastek, J. Christen, T. Wernicke, M. Weyers, M. Kneissl, Structural and optical properties of nonpolar GaN thin films Applied Physics Letters. ,vol. 92, pp. 171904- ,(2008) , 10.1063/1.2918834
Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Journal of Crystal Growth. ,vol. 311, pp. 2887- 2890 ,(2009) , 10.1016/J.JCRYSGRO.2009.01.036