One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy

摘要: Abstract The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control offset angle sidewall found be effective for realizing one-sidewall-seeded a -plane (1 1 2¯ 0) on r (1 1¯ 0 2) sapphire. number coalescence regions grooves reduced, and threading-dislocation stacking-fault densities as low 10 6 –10 7  cm −2 3 4 −1 , respectively, were successfully realized.