Phase control of semi-polar (112¯2) and non-polar (112¯0) GaN on cone shaped r-plane patterned sapphire substrates
作者： Mei-Tan Wang , Frank Brunner , Kuan-Yung Liao , Yun-Li Li , Snow H. Tseng
DOI: 10.1016/J.JCRYSGRO.2013.01.032
关键词:
摘要: Abstract The control of formation semi-polar ( 11 2 ¯ ) and nonpolar a -plane 0 GaN phases on r cone shaped patterned sapphire substrates (CPSS) by metalorganic vapor-phase epitaxy has been investigated. With nucleation layer grown at 535 °C 200 mbar, only is formed. Increasing the temperature to 965 °C, 200 mbar. At reduced reactor pressure 60 mbar, phase selectivity breaks down non-polar exist simultaneously. crystalline quality CPSS can be effectively improved using optimized growth direction control.
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