Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire
作者： Qian Sun , Bo Hyun Kong , Christopher D. Yerino , Tsung-Shine Ko , Benjamin Leung
DOI: 10.1063/1.3272790
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摘要: In this paper, we report a detailed study on the evolution of surface morphology and microstructure nonpolar a-plane GaN (a-GaN) through controlled growth interruptions. Microscopy imaging shows that two-step a-GaN went roughening-recovery process. The first-step (under high V/III pressure) produced rough with tall mesas separated by voids. second-step low promoted lateral filled up Striations formed during island coalescence persisted throughout growth, but could be relieved an additional third-step growth. morphological was explained according to kinetic Wulff plots. films investigated transmission electron microscopy (TEM) x-ray rocking curve analysis. Most extended defects observed in plan-view TEM images were I1 type basal-plane stacking faults (BSFs) their associated partial disloc...
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