Doping of chemically deposited intrinsic CdS thin films to n type by thermal diffusion of indium

摘要: CdS thin films deposited from chemical bath containing citratocadmium(II) and thiourea are intrinsic highly photosensitive. In the present letter, we discuss conversion of such to n type by thermal diffusion indium an evaporated 50 nm film on film. The process which takes place in temperature range 250 °C–350 °C involves formation In2O3 surface layer acts as a barrier preventing outdiffusion indium. This allows diffuse into results indium‐doped electrical conductivity is about 300 Ω−1 cm−1. All beneficial optical properties chemically for application window material heterojunction optoelectronic devices retained.