Infrared LEDs and microcavities based on erbium-doped silicon nanocomposites
作者： H.A. Lopez , P.M. Fauchet
DOI: 10.1016/S0921-5107(00)00744-3
关键词:
摘要: Abstract We demonstrate stable room-temperature electroluminescence at 1.54 μm under both forward and reverse bias conditions from erbium-doped silicon nanocomposites. also show enhanced tunable emission erbium when incorporated in porous based microcavities. Erbium is infiltrated the pores by cathodic electrochemical migration of ions followed high temperature annealing (600–1100°C) to produce a composite material made nanocrystals dioxide. The devices exhibit an exponential dependence as function driving current voltage. In bias, external quantum efficiency reaches 0.01%. large intensity. intensity decreases factor 24 2.6 increases 240 300 K. photoluminescence microcavity resonators more than one order magnitude tuned emit areas where natural very weak.
elsevier.com
sci-hub.se 参考文章(20)
J. Michel, L.V.C. Assali, M.T. Morse, L.C. Kimerling, Chapter 4 Erbium in Silicon Semiconductors and Semimetals. ,vol. 49, pp. 111- 156 ,(1997) , 10.1016/S0080-8784(08)62502-8
L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, M. Zacharias, P. M. Fauchet, J. P. McCaffrey, D. J. Lockwood, Nanocrystalline-silicon superlattice produced by controlled recrystallization Applied Physics Letters. ,vol. 72, pp. 43- 45 ,(1998) , 10.1063/1.120640
T. Kimura, A. Yokoi, H. Horiguchi, R. Saito, T. Ikoma, A. Sato, Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm Applied Physics Letters. ,vol. 65, pp. 983- 985 ,(1994) , 10.1063/1.112169
L. Pavesi, Porous silicon dielectric multilayers and microcavities La Rivista del Nuovo Cimento. ,vol. 20, pp. 1- 76 ,(1997) , 10.1007/BF02877374
Selena Chan, Philippe M. Fauchet, Tunable, narrow, and directional luminescence from porous silicon light emitting devices Applied Physics Letters. ,vol. 75, pp. 274- 276 ,(1999) , 10.1063/1.124346
H. Ennen, J. Schneider, G. Pomrenke, A. Axmann, 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon Applied Physics Letters. ,vol. 43, pp. 943- 945 ,(1983) , 10.1063/1.94190
E. F. Schubert, A. M. Vredenberg, N. E. J. Hunt, Y. H. Wong, P. C. Becker, J. M. Poate, D. C. Jacobson, L. C. Feldman, G. J. Zydzik, Giant enhancement of luminescence intensity in Er‐doped Si/SiO2 resonant cavities Applied Physics Letters. ,vol. 61, pp. 1381- 1383 ,(1992) , 10.1063/1.107544
H. Ennen, U. Kaufmann, G. Pomrenke, J. Schneider, J. Windscheif, A. Axmann, Rare earth activated luminescence in InP, GaP and GaAs Journal of Crystal Growth. ,vol. 64, pp. 165- 168 ,(1983) , 10.1016/0022-0248(83)90264-6
Herman A. Lopez, Philippe M. Fauchet, Room-temperature electroluminescence from erbium-doped porous silicon Applied Physics Letters. ,vol. 75, pp. 3989- 3991 ,(1999) , 10.1063/1.125515
Giorgia Franzò, Salvatore Coffa, Francesco Priolo, Corrado Spinella, Mechanism and performance of forward and reverse bias electroluminescence at 1.54 μm from Er-doped Si diodes Journal of Applied Physics. ,vol. 81, pp. 2784- 2793 ,(1997) , 10.1063/1.363935