Thermopower and transport properties of AsF5-doped polyacetylene
作者： J.F. Kwak , W.D. Gill , R.L. Greene , K. Seeger , T.C. Clarke
DOI: 10.1016/0379-6779(80)90011-9
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摘要: Abstract Measurements of thermoelectric power versus temperature (CH) x doped with various concentrations AsF 5 are reported. These reflect the semiconductor-metal transition at ∼ 1% doping. The “pristine” thermopower is consistent conductivity-derived activation energy 0.35 eV, and a residual defect/impurity carrier concentration 0.1%. An analysis conductivity based on these data indicates that, while disorder certainly important, it not cause transition.
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