Zero-biased solar-blind photodetectors based on AlN/β-Ga2O3 heterojunctions

作者: Xun Yang , Chongxin Shan , Qing Lou , Yancheng Chen , Chaonan Lin

DOI: 10.1088/1361-6641/ABF3AA

关键词:

摘要: Monoclinic gallium oxide (β-Ga2O3) has drawn much attention in solar-blind detection because of its unique characteristics such as good thermal and chemical stability, intrinsic visible/solar blind, high breakdown electric field, etc. However, the relatively slow response hinders actual applications β-Ga2O3 photodetectors. In this work, photodetectors with a fast speed 320 ns been developed based on AlN/β-Ga2O3 heterojunctions. Moreover, heterojunction photodetector can work at 0 V responsivity 7.0 mA/W sensitivity reaches up to 1.25 × 1013 cm Hz1/2 W−1. The results reported indicate that heterojunctions are feasible for sensitivity.

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