A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands

作者: H. Kosina , M. Harrer , P. Vogl , S. Selberherr

DOI: 10.1007/978-3-7091-6619-2_96

关键词:

摘要: To represent the valence bands of cubic semiconductors a coordinate transformation is proposed such that hole energy becomes an independent variable. This choice considerably simplifies evaluation integrated scattering probability and state after in Monte Carlo procedure. In new system, numerically given band structure expanded into series spherical harmonics. expansion technique capable resolving details at Brillouin zone boundary hence can span range several electron-volts. Results simulation employing representation are shown.

参考文章(3)
C. Canali, G. Ottaviani, A. Alberigi Quaranta, Drift velocity of electrons and holes and associated anisotropic effects in silicon Journal of Physics and Chemistry of Solids. ,vol. 32, pp. 1707- 1720 ,(1971) , 10.1016/S0022-3697(71)80137-3
Karlheinz Seeger, Semiconductor Physics Springer Series in Solid-State Sciences. ,(1989) , 10.1007/978-3-662-02576-5