作者: H. Kosina , M. Harrer , P. Vogl , S. Selberherr
DOI: 10.1007/978-3-7091-6619-2_96
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摘要: To represent the valence bands of cubic semiconductors a coordinate transformation is proposed such that hole energy becomes an independent variable. This choice considerably simplifies evaluation integrated scattering probability and state after in Monte Carlo procedure. In new system, numerically given band structure expanded into series spherical harmonics. expansion technique capable resolving details at Brillouin zone boundary hence can span range several electron-volts. Results simulation employing representation are shown.