Band Structure and Scattering Mechanisms

摘要: The models for the band structure and scattering are discussed in this chapter. electronic of Si or SiGe is quite complex, analytical expressions dispersion relation involve rather stringent approximations, especially at high energies. On other hand, direct inclusion full into SHE simulator least not possible conduction bands. Instead, a valley model bands preferable SHE, development such based on important physically sound simulations. Several electrons, which can be used within solver, introduced. In last section chapter, mechanisms considered work briefly presented.