Method of manufacturing a flash memory cell
作者： Noh Yeal Kwak , Cha Deok Dong
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摘要: A method of manufacturing a flash memory cell in which an ion implantation process is performed before cleaning for etching protrusion trench insulating film to nipple shape. As result, the etch rate at portion except portions moat will occur along increased. Therefore, generation can be prevented and spacing floating gate optimized.
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