Method for fabricating a flash EEPROM
作者： Tyler A. Lowrey , Trung Tri Doan
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摘要: A method for forming a floating gate semiconductor device such as an electrically erasable programmable read only memory is provided. The includes silicon substrate having isolated active area. oxide, well other components of FET (e.g., source, drain) are formed in the self aligned by depositing conductive layer polysilicon) into recess and over oxide. then chemically mechanically planarized to endpoint isolation so that all except material on oxide removed. Following formation insulating control layer.
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