Room temperature yellow InGaAlP quantum dot laser

摘要: Abstract We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and experimental results on injection lasing green–orange spectral range (558–605 nm) (AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase epitaxy side–by–side (8 1 1)A, (2 1 1)A (3 2 2)A GaAs substrates, which surface orientations strongly tilted towards [1 1 1]A direction with respect to (1 0 0) plane. Four sheets GaP–rich quantum insertions applied suppress leakage non–equilibrium electrons from gain medium. Two types medium applied. In one case 4–fold stacked (In,Ga)P used. Experimental data shows that self–organized vertically–correlated dots (QDs) are formed (2 1 1)A– (3 2 2)A–oriented while corrugated wires (8 1 1)A surface. other a short–period superlattice (SPSL) composed 16–fold quasi–lattice–matched 1.4 nm–thick In0.5Ga0.5P layers separated 4 nm–thick (Al0.6Ga0.4)0.5In0.5P was Laser QDs having threshold current densities ∼7–10 kA/cm2 at room temperature realized for both cavity lengths ∼1 mm. Emission wavelength ∼599–603 nm. Threshold density stimulated emission as low ∼1 kA/cm2. For (8 1 1)A–grown no observed. SPSL demonstrated only temperatures