Optical properties of InAs quantum dots in a Si matrix
作者： R Heitz , NN Ledentsov , D Bimberg , A Yu Egorov , MV Maximov
DOI: 10.1063/1.123660
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摘要: We investigate the optical properties of nanoscale InAs quantum dots (QDs) in a Si matrix. At growth temperature 400 °C, deposition 7 ML leads to formation coherent islands with dimensions 2–4 nm range. A luminescence band 1.3 μm region found exclusively for samples such QDs exhibits pronounced excitation density dependence peak position and decay time 440 ns. The suggest an indirect type II transition InAs/Si QDs. electronic structure is discussed view available offset information.
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