Amorphous silicon/silicon carbide photodiodes with excellent sensitivity and selectivity in the vacuum ultraviolet spectrum

摘要: An innovative family of thin‐film photodetectors optimized for the ultraviolet (UV) spectrum is presented here. The devices are made hydrogenated amorphous silicon (a‐Si:H) and carbide (a‐SiC:H) on glass substrates. At room temperature, exhibit values quantum efficiency 21% in vacuum UV 0.08% at 750 nm, without external voltage. great advantage this technology lies possibility to produce low‐cost, large‐area arrays or flexible All these features candidate a‐Si/SiC:H as possible, concurrent specialized commercial devices.