Si single-electron MOS memory with nanoscale floating-gate and narrow channel

摘要: Floating-gate MOS memories based on single electron effect are very attractive, because of the potential quantized threshold voltage shift, charging to create small device size and fast time. However, relax challenges in fabricating such devices, previous single-electron (SEMMs) had have nonconventional structures (e.g. a polysilicon channel or floating gate consisting many isolated silicon nanocrystals), causing large fluctuation dimension performance making them unsuitable ULSI. Here we present first SEMMs having narrow crystalline Si nanoscale poly-Si well controlled dimension. We report that will lead to, at room temperature, discrete voltage, self-limiting process.