Molecular dynamics simulation of damage cascade creation in SiC composites containing SiC/graphite interface

摘要: Silicon carbide composites have been investigated for their use as structural materials advanced nuclear reactor designs. Although the significantly enhanced mechanical properties and structure integrity, there is little known about behavior of defects in presence a graphite-silicon interface. In this study, molecular dynamics simulations used to model defect creation clustering composite containing SiC/graphite Evolution displacements function time were studied compared bulk SiC. The results show that first few SiC atomic layers closest interface are easily damaged. However, beyond these system appears be unaffected by