Radiation interaction with tilt grain boundaries in β-SiC
作者： Narasimhan Swaminathan , Marcin Wojdyr , Dane D. Morgan , Izabela Szlufarska
DOI: 10.1063/1.3693036
关键词:
摘要: Interaction between grain boundaries and radiation is studied in 3C-SiC by conducting molecular dynamics cascade simulations on bicrystal samples with different misorientation angles. The damage the in-grain regions was found to be unaffected boundary type comparable single crystal SiC. Radiation-induced chemical disorder quantified using homonuclear heteronuclear bond ratio (χ). We that χ increases nearly monotonically angle, which behavior has been attributed decreasing distance dislocation cores an increasing angle. change due irradiation independent of boundary.
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