作者: Y. Suzuki , H. Iwamura , T. Miyazawa , O. Mikami
DOI: 10.1109/3.301644
关键词:
摘要: The operating principle of our polarization mode splitter is based on the polarization-dependent refractive index changes induced by disordering InGaAs/InP superlattices. We disordered superlattices Si/sub 3/N/sub 4/ cap-annealing method and measured near-field patterns to confirm that device functioned properly at a wavelength 1.52 /spl mu/m. crosstalk was about -10 dB. should be able improve characteristics this optimizing its structure. This requires no electrical control will very suitable for semiconductor monolithic integrated circuits. >