Cs/GaAs(100) surface: Two-dimensional metal or Hubbard insulator?
作者： O. E. Tereshchenko , V. L. Al’perovich , A. S. Terekhov , A. N. Litvinov
DOI: 10.1134/1.568212
关键词:
摘要: The evolution of the characteristic electron energy loss spectra accompanying deposition cesium on GaAs(100) surfaces with various superstructural reconstructions is studied experimentally. It shown that appearance peaks in GaAs band gap for Cs coverages θCs>0.5 monolayers due to resonances longitudinal and transverse polarizability two-dimensional metallic clusters adatoms.
harvard.edu
springer.com
sci-hub.se 参考文章(14)
L. J. Whitman, Joseph A. Stroscio, R. A. Dragoset, R. J. Celotta, Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metals. Physical Review Letters. ,vol. 66, pp. 1338- 1341 ,(1991) , 10.1103/PHYSREVLETT.66.1338
M Nakayama, T Kato, K Ohtomi, Theory of the intersurfacedband plasmon Solid State Communications. ,vol. 50, pp. 409- 412 ,(1984) , 10.1016/0038-1098(84)90637-9
V. L. Alperovich, D. Paget, Diffusion and ordering of Cs adatoms on GaAs(001) studied by reflectance anisotropy spectroscopy Physical Review B. ,vol. 56, ,(1997) , 10.1103/PHYSREVB.56.R15565
D. Rodway, AES, photoemission and work function study of the deposition of Cs on (100) and (111)B GaAs epitaxial layers Surface Science. ,vol. 147, pp. 103- 114 ,(1984) , 10.1016/0039-6028(84)90169-9
A. V. Chaplik, Absorption and emission of electromagnetic waves by two-dimensional plasmons Surface Science Reports. ,vol. 5, pp. 289- 335 ,(1985) , 10.1016/0167-5729(85)90010-X
O. E. Tereshchenko, S. I. Chikichev, A. S. Terekhov, Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces Journal of Vacuum Science and Technology. ,vol. 17, pp. 2655- 2662 ,(1999) , 10.1116/1.581926
V. L. Alperovich, A. G. Paulish, A. S. Terekhov, Domination of adatom-induced over defect-induced surface states on p-type GaAs(Cs,O) at room temperature Physical Review B. ,vol. 50, pp. 5480- 5483 ,(1994) , 10.1103/PHYSREVB.50.5480
A V Chaplik, A O Govorov, Quantum fluctuations in a quantum dot array in the regime of ferroelectric phase transitions Journal of Physics: Condensed Matter. ,vol. 8, pp. 4071- 4077 ,(1996) , 10.1088/0953-8984/8/22/011
J. Kim, M.C. Gallagher, R.F. Willis, Cs adsorption on n- and p-type GaAs(001)(2×4) surfaces Applied Surface Science. ,vol. 67, pp. 286- 291 ,(1993) , 10.1016/0169-4332(93)90327-8
N. J. DiNardo, T. Maeda Wong, E. W. Plummer, Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110). Physical Review Letters. ,vol. 65, pp. 2177- 2180 ,(1990) , 10.1103/PHYSREVLETT.65.2177