Diffusion and ordering of Cs adatoms on GaAs(001) studied by reflectance anisotropy spectroscopy
作者： V. L. Alperovich , D. Paget
DOI: 10.1103/PHYSREVB.56.R15565
关键词:
摘要: Diffusion and ordering of Cs overlayers deposited at a low temperature 90 K on GaAs(001) are observed by reflectance anisotropy (RA) spectroscopy after annealing to higher temperatures. At coverages $(l~0.3$ monolayer), the cesium is revealed as narrowing Ga-dimer line in RA spectra, which occurs $Tg~200$ K. A possible reason for such diffusion individual adatoms preferential adsorption sites. larger than 0.5 monolayer, majority not isolated, diffusion-induced changes spectra occur lower 200 characterized broad spectrum, suggest change surface macroscopic anisotropy.
harvard.edu
sci-hub.se 参考文章(23)
M. Prietsch, M. Domke, C. Laubschat, T. Mandel, C. Xue, G. Kaindl, Photoemission study of alkali/GaAs(110) interfaces European Physical Journal B. ,vol. 74, pp. 21- 33 ,(1989) , 10.1007/BF01307236
F BECHSTEDT, M SCHEFFLER, Alkali adsorption on GaAs(110): atomic structure, electronic states and surface dipoles Surface Science Reports. ,vol. 18, pp. 145- 198 ,(1993) , 10.1016/0167-5729(93)90001-6
P. N. First, Joseph A. Stroscio, R. A. Dragoset, D. T. Pierce, R. J. Celotta, Metallicity and gap states in tunneling to Fe clusters in GaAs(110). Physical Review Letters. ,vol. 63, pp. 1416- 1419 ,(1989) , 10.1103/PHYSREVLETT.63.1416
T T Tsong, Experimental studies of the behaviour of single adsorbed atoms on solid surfaces Reports on Progress in Physics. ,vol. 51, pp. 759- 832 ,(1988) , 10.1088/0034-4885/51/6/001
E.D. Westre, D.E. Brown, J. Kutzner, S.M. George, Surface diffusion of potassium on Ru(001) Surface Science. ,vol. 294, pp. 185- 196 ,(1993) , 10.1016/0039-6028(93)90107-U
R.H. Milne, M. Azim, R. Persaud, J.A. Venables, Surface diffusion of Cs on Si(100)-2×1 Surface Science. ,vol. 336, pp. 63- 75 ,(1995) , 10.1016/0039-6028(95)00512-9
J. Kim, M.C. Gallagher, R.F. Willis, Cs adsorption on n- and p-type GaAs(001)(2×4) surfaces Applied Surface Science. ,vol. 67, pp. 286- 291 ,(1993) , 10.1016/0169-4332(93)90327-8
A.J Van Bommel, J.E Crombeen, T.G.J Van Oirschot, Leed, aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption Surface Science. ,vol. 72, pp. 95- 108 ,(1978) , 10.1016/0039-6028(78)90381-3
Itaru Kamiya, D. E. Aspnes, L. T. Florez, J. P. Harbison, Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum Physical Review B. ,vol. 46, pp. 15894- 15904 ,(1992) , 10.1103/PHYSREVB.46.15894
U. Resch, S.M. Scholz, U. Rossow, A.B. Müller, W. Richter, A. Förster, Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy Applied Surface Science. ,vol. 63, pp. 106- 110 ,(1993) , 10.1016/0169-4332(93)90072-J