Effect of pretreatment on Al2O3 substrate by depositing Al2O3 film on the properties of Ni–Cr–Si based thin film resistor
作者： K.C. Chung , Wen-Hsi Lee
DOI: 10.1016/J.MATCHEMPHYS.2019.05.058
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摘要: Abstract In this study, a pretreatment on aluminum oxide substrate by sputtering with an film is investigated to improve the surface roughness of deposited NiCrSi (55/40/5) thin resistor. Effect parameters and thermal treatment are studied. Aluminum Ar/O2 flow rate (55/5) sccm shows lowest energy at 41.5 J/m2 that would be helpful in improving quality resistive film. On other hand, increasing thickness film, alumina observed significantly decreased quite continuity According our investigations, developing narrow distribution high resistance resistor reducing feasible when was pretreated can improved, leading
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