作者: Beatriz Könnemann
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摘要: A method for producing chips from a wafer of low thickness, in which the has an active side on integrated circuits are arranged grid with interspaces and metallized backside facing away side, preferably includes steps of: coating protective coating; covering mask having light-transmitting lines disposed along between circuits, being otherwise non-light transmitting, exposing to light exposed lines; etching trenches depth removing wafer, applying carrier wafer; grinding by way thickness about 20 microns greater than trenches; base and, releasing carrier.