作者: K Mašek , S Nemšák , M Mravčáková , P Blumentrit , T Skála
DOI: 10.1088/1742-6596/100/1/012008
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摘要: Epitaxial thin films of tungsten oxide were prepared by radio-frequency plasma oxidation the W(110) surface followed thermal annealing. Reflection High-Energy Electron Diffraction (RHEED) showed that composed crystal grains having a pseudo-cubic structure and (111) epitaxial plane. The re-crystallisation process led to reduction films. A lack oxygen atoms was compensated formation crystallographic shear planes (CSP). Deposited Pd formed three-dimensional clusters with plane reflecting hexagonal symmetry lattice. Electronic Pd/tungsten oxide/W(110) investigated means X-ray Photoelectron Spectroscopy (XPS) Synchrotron Radiation (SRPES) methods. film exhibited well-defined states indicated narrow components in W 4f spectrum which not observed amorphous phase. deposition significant changes valence band but detailed analysis 3d lines did show direct interaction species.