Etchant solution containing HF-HnO3 -H2 SO4 -H2 O2
作者： A Mark
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摘要: An etchant solution for multilayered metal layers comprising an aqueous of from 0.5 to 50 percent by weight nitric acid, 0.03 1.0 hydrofluoric 0.05 hydrogen peroxide and 0.1 sulphuric acid. The is compatible with photolithographic techniques uniformly etches three or more metals.
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