Reduction of the electron density in GaAs-AlxGa1-xAs single heterojunctions by continuous photoexcitation.
作者： I. V. Kukushkin , K. von Klitzing , K. Ploog , V. E. Kirpichev , B. N. Shepel
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摘要: En utilisant le magnetotransport et l'optique magnetique, on demontre que par photoexcitation continue une lumiere laser, la concentration d'electrons 2D dans l'heterojonction GaAs-Al x Ga 1-x peut decroitre fortement comparaison a valeur obtenue l'obscurite apres illumination. L'amplitude de l'effet depend longueur d'onde l'intensite lumineuse ainsi en donneurs Al As. La reduction est plus grande si l'energie des photons superieure au gap bande decroissance observee n'est pas accompagnee mobilite electrons importante pour investigations optiques Hall quantique cristallisation Wigner
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