Spatial quantization in GaAs–AlGaAs multiple quantum dots

作者: M. A. Reed

DOI: 10.1116/1.583331

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摘要: We present results of the fabrication and investigation totally spatially localized crystalline structures. Low temperature photoluminescence exhibits structure that is best explained by a bottleneck for hole energy loss. This believed to be direct consequence modification band fabrication‐imposed potential first evidence total spatial quantization in fabricated heterojunction system.

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