Reactive Diffusion between Ag and Sn at Solid State Temperatures

摘要: The reactive diffusion at solid-state temperatures was experimentally studied for the binary Ag-Sn system. Sn/Ag/Sn couples were prepared by a bonding technique and then annealed between T ¼ 433 473 K various periods in an oil bath with silicone oil. After annealing, layers of " (Ag3Sn) andcompounds observed to form Sn/Ag interface. Furthermore, thin layer alloyed Sn produced into Ag specimen from � /Ag interface owing induced recrystallization (DIR). thickness is about one order magnitude greater than theand DIR layers. total l andlayers described as function annealing time t equation kðt=t0Þ n . Here, t0 unit time, 1 s. exponent 0.40, 0.38 0.36 433, 453 K, respectively. If controlled volume diffusion, equal 0.5. However, actually smaller 0.5 all temperatures. This indicates that grain boundary contributes growth occurs certain rates. As temperature decreases, contribution should be more remarkable, but will become sluggish. reason why value increases decreasing temperature.