Growth Rate of Fine Grains Formed by Diffusion Induced Recrystallization in Ni Layer of Cu/Ni/Cu Diffusion Couples

摘要: Diffusion induced recrystallization (DIR) in the Ni(Cu) system was experimentally studied. The notation means that Cu atoms diffuse into a pure Ni or binary Ni-Cu phase. Cu/Ni/Cu diffusion couples consisting of single crystals with same crystallographic orientation and polycrystalline specimen were annealed at 923 1023 K for various times between 1.8 × 10 3 1.76 5 s. penetration phase found to occur rates three orders magnitude greater than ones evaluated from volume diffusion. This unusually rapid is due DIR. DIR observed take place only interfaces all K. observations indicate thickness I region increases increasing annealing time t according relationships l=4.9 -8 (t/t 0 ) 0.41 l=1.8 l0 -7 0.37 K, respectively. Here, are measured m s, respectively, unit time, 1 analysis using kinetic equation proposed by Li Hillert could account quantitatively.