Formation of metal disilicide layers contacting ion beam-synthesized, buried 3C–SiC layers in silicon
作者： J.K.N. Lindner , S. Wenzel , B. Stritzker
DOI: 10.1016/S0169-4332(01)00680-8
关键词:
摘要: Abstract Large-area heteroepitaxial Si/SiC/Si structures can be formed by ion beam synthesis. In this paper, the conversion of Si top layer such into a metal disilicide contact high-dose titanium implantation is described. Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, energy-filtered diffraction, X-ray scanning atomic force and electrical measurements are used to characterize resulting systems. It shown that proper adjustment dose—taking account sputtering rates Ti atoms—well-conductive textured C54–TiSi2 layers in single fabrication step. These structurally electrically stable up 900 °C or higher. The surface roughness determined grain size silicide controlled via temperature. at overly high doses, metal-rich silicides formed. case, diffusion from substrate metallization strain-induced macrodefects SiC thin film leads cavity formation lower SiC/Si interface.
elsevier.com
sci-hub.se 参考文章(11)
A. Nejim, P. L. F. Hemment, J. Stoemenos, SiC buried layer formation by ion beam synthesis at 950 °C Applied Physics Letters. ,vol. 66, pp. 2646- 2648 ,(1995) , 10.1063/1.113112
Jörg K.N. Lindner, Ion beam synthesis of buried SiC layers in silicon: Basic physical processes Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 178, pp. 44- 54 ,(2001) , 10.1016/S0168-583X(01)00504-3
Dihu Chen, S. P. Wong, W. Y. Cheung, W. Wu, E. Z. Luo, J. B. Xu, I. H. Wilson, R. W. M. Kwok, Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source Applied Physics Letters. ,vol. 72, pp. 1926- 1928 ,(1998) , 10.1063/1.121229
U. Preckwinkel, J.K.N. Lindner, B. Stritzker, B. Rauschenbach, Structure and strain measurements on SiC formed by carbon ion implantation Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 120, pp. 125- 128 ,(1996) , 10.1016/S0168-583X(96)00493-4
J.K.N. Lindner, K. Volz, U. Preckwinkel, B. Götz, A. Frohnwieser, B. Rauschenbach, B. Stritzker, Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis Materials Chemistry and Physics. ,vol. 46, pp. 147- 155 ,(1996) , 10.1016/S0254-0584(97)80008-9
J.K.N Lindner, B Stritzker, Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. ,vol. 147, pp. 249- 255 ,(1999) , 10.1016/S0168-583X(98)00598-9
J.K.N. Lindner, S. Wenzel, B. Stritzker, Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 175, pp. 324- 330 ,(2001) , 10.1016/S0168-583X(00)00593-0
B. Götz, J.K.N. Lindner, B. Stritzker, Ion beam synthesis of SiC layers in SIMOX material Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 127, pp. 333- 336 ,(1997) , 10.1016/S0168-583X(96)00951-2
C. Serre, A. Pérez-Rodrı́guez, J.R. Morante, P. Gorostiza, J. Esteve, Determination of micromechanical properties of thin films by beam bending measurements with an atomic force microscope Sensors and Actuators A-physical. ,vol. 74, pp. 134- 138 ,(1999) , 10.1016/S0924-4247(98)00347-1
C. Serre, A. Pérez-rodríguez, L. Calvo-Barrio, A. Romano-RodríGuez, J.R. Morante, J. Esteve, M.C. Acero, W. Skorupa, R. Kögler, Synthesis of Thin Membranes in Si Technology by Carbon Ion Implantation MRS Proceedings. ,vol. 396, ,(1995) , 10.1557/PROC-396-727