Structure and strain measurements on SiC formed by carbon ion implantation
作者： U. Preckwinkel , J.K.N. Lindner , B. Stritzker , B. Rauschenbach
DOI: 10.1016/S0168-583X(96)00493-4
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摘要: Abstract Thin buried silicon carbide layers have been formed by high-dose carbon ion implantation into and subsequent annealing. The formation of SiC during the structure after annealing are investigated X-ray diffraction measurements using a four-circle goniometer. A detailed stress analysis epitaxially aligned 3CSiC precipitates is presented. three-dimensional strain tensors calculated for different doses. With increasing dose, relaxation accompanied transition from isotropic to anisotropic strain/stress states observed. dose dependence peak intensities present in as-implanted state studied. Stress show further annealed state.
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