Characterization and optimization of ITO thin films for application in heterojunction silicon solar cells
作者： Shui-Yang Lien , None
DOI: 10.1016/J.TSF.2010.03.023
关键词:
摘要: Abstract This investigation elucidates the properties of indium–tin oxide (ITO) thin films used as antireflection front electrodes in μc-Si/c-Si heterojunction (HJ) solar cells. The deposition conditions ITO film by electron-gun evaporation were optimized for HJ cell applications. Microstructure, surface morphology, electrical and optical these then characterized analyzed. Next, effects substrate temperature on growth discussed. thickness was considering that refractive index μc-Si emitter layer optimizes its characteristics spectral response. best conversion efficiency 16.4% with an open circuit voltage ( V oc ) 0.645 V, fill factor (FF) 0.73, short current density J sc 34.8 mA/cm 2 .
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