Enhanced photocurrent of Si solar cell with the inclusion of a transparent indium tin oxide thin film
作者： Bhaskar Parida , Hyung Yong Ji , Gyoung Ho Lim , Seungil Park , Keunjoo Kim
DOI: 10.1063/1.4897656
关键词:
摘要: We investigated the enhanced photocurrents in crystalline Si solar cells with inclusion of indium tin oxide thin film. The enhances quantum efficiency and reduces photoreflectance spectral region 310–1048 nm. photocurrent is ranged at band edge for peak near 1033 nm. For subband gap region, strongly reduced by film, indicating that transmission infrared spectra was prevented plasmonic metamaterial effect. fabricated cell showed short circuit current density due to carrier excitation behavior conduction induced metallic shunt resistance pn junction related blocking Ag paste penetration into emitter layer film during fabrication process.
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