Role of boundary roughness in the electronic transport of Bi nanowires

摘要: We present a study of electronic transport in 200 nm diameter bismuth nanowire arrays embedded an alumina matrix where the nanowires are oriented preferentially with trigonal crystalline axis parallel to wire length. The is based on measurements resistance and thermopower over wide range temperatures (4–300 K) as well magnetoresistance for fields up 9 T. Fermi energies obtained from Landau level spectrum; results show that wires have intrinsic electron hole concentrations. At high temperatures, mobilities temperature dependent mobility several orders magnitude larger than holes. This behavior, which also observed bulk, attributed carrier-phonon scattering. low independent roughly same electrons An interpretation terms boundary roughness scattering proposed.