Quantum Transport Length Scales in Silicon-based Semiconducting Nanowires: Surface Roughness Effects
作者： Aurélien Lherbier , Martin P. Persson , Yann-Michel Niquet , François Triozon , Stephan Roche
DOI: 10.1103/PHYSREVB.77.085301
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摘要: We report on a theoretical study of quantum charge transport in atomistic models silicon nanowires with surface roughness disorder, using an efficient real-space, order N Kubo-Greenwood approach and Landauer-Buttiker Green's function method. Different regimes (from quasiballistic to localization) are explored depending the length nanowire characteristics profile. Quantitative estimates elastic mean free paths, mobilities, localization lengths provided as correlation disorder. Moreover, limitations Thouless relation between path outlined. © 2008 The American Physical Society.
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