作者: Zhong Lin Wang , James Bentley
DOI: 10.1051/MMM:0199100206056900
关键词:
摘要: A theory is proposed to include the effects of valence excitations in electron image simulations for high-resolution microscopy (HREM) based on single inelastic scattering model. Under small thickness approximation, this general reduces simplified perfectly delocalized model, which can be considered an incoherent sum those incident electrons different energies weighted by intensity distribution energy-loss spectrum from area where pattern was taken. The main effect valence-loss introduce a focus shift due chromatic aberration, resulting contrast variation (or reversal) image. generalization interface images with considering surface and plasmon given. Calculations GaAs profile are demonstrated show localization.