Phonon confinement in oxide-coated silicon nanowires
作者： Somnath Bhattacharyya , Saumyadip Samui
DOI: 10.1063/1.1651648
关键词:
摘要: Raman spectroscopy of micron-long crystalline Si nanowires covered with a thick SiO2 layer showed downshift and asymmetric broadening the first order TO phonon peak when compared bulk (q=0) mode. The shift were attributed to confinement in nanowires. A phenomenological model, incorporating effects nanowire diameter distribution, is presented. This model shown accurately describe consistent microstructure In addition work distribution wave vector was directly taken into consideration replacing fit peak. nano-Si:SiO2 boundary on spectra are discussed terms softening confinement.
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