Creation of SiOF films with SiF4/O2 plasmas: From gas-surface interactions to film formation
作者： Jianming Zhang , Ellen R. Fisher
DOI: 10.1063/1.1760835
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摘要: Fluorinated SiO2 (SiOF) films have been studied because of their relatively low dielectric constant and potential as a replacement for in the microelectronics industry. Despite intense scrutiny, many details mechanisms SiOF film deposition remain unclear. Here, we examined macroscopic molecular level chemistry using SiF4/O2 plasmas. In formation studies, plasma parameters SiF4 fraction feed gases, F, defined SiF4/(SiF4+O2), applied rf power (P) were well effects ion bombardment substrate temperature on deposition. Fluorine incorporation increases with both F P. Film-deposition rate also P, whereas its dependence is more complex. Ion decreases affects composition significantly. On level, surface reactivity SiF SiF2 during imaging ra...
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