Effect of Ti and Zn Doping on the Structural, Electric, and Magnetic Properties of GaFeO 3
作者： Mongi Amami , Shara. A. Dulmani , Lamia Ben Farhat
DOI: 10.1007/S10948-018-4602-2
关键词:
摘要: Multidoped (Zn,Ti) gallium orthoferrite [GaFeO3 and Ga0.98Zn0.02Fe0.98Ti0.02O3] ceramic was synthesized through a solid-state reaction. X-ray analysis of the prepared material provides its basic crystal data single-phase orthorhombic system. The scattered crystallite size lattice strain were estimated. Analysis micrograph field emission scanning electron microscope shows uniform grain distribution in sample, suggesting formation good quality sample. Founded on magnetic measurements, it is concluded that (Zn,Ti)-modified ferrite has provided reduction Curie temperature (TC); however, no significant changes magnetization values with Zn Ti integration GaFeO3 lattice. A noteworthy effect substitution multiple elements at Ga Fe sites dielectric constant tangent loss been observed. Complete studies (180–400 K) frequency (10–107 Hz) dependence impedance have grains boundaries conduction mechanism relaxation material.
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